Frequency-Dependent Impedance Responses of ZnO Using UV Light

dc.contributor.authorCheng, Jiaqi
dc.contributor.authorPoduska, Kristin M.
dc.date.issued2019-01-10
dc.description.abstractImpedance spectroscopy data show that polycrystalline ZnO films can show either increases or decreases in their effective resistances after UV exposure, depending on the frequency of the applied AC excitation. Simple equivalent circuit models, based on resistance (R) and capacitance (C) in parallel, are sufficient to confirm the observed experimental trends. Simulated data demonstrate that that arbitrary R and C values will not produce the sign change, but that typical resistance and capacitance characteristics for photoconductive semiconductors like ZnO can cause the sign change. These results suggest that it could be desirable to manipulate the R and C values of photodetector materials to either control – or eliminate – such frequency-dependent UV responses.
dc.description.noteOpen Access article
dc.format.issue1
dc.format.volume8
dc.identifier.issn2162-8777
dc.identifier.urihttps://doi.org/10.1149/2.0041901jss
dc.identifier.urihttps://hdl.handle.net/20.500.14783/7916
dc.language.isoen
dc.publisherElectrochemical Society
dc.relation.urihttps://www.electrochem.org/
dc.subjectSemiconductors
dc.subjectSensors
dc.subjectimpedance spectroscopy
dc.subjectphotoconductivity
dc.subjectZnO
dc.titleFrequency-Dependent Impedance Responses of ZnO Using UV Light
dc.typearticle
mem.campusSt. John's Campus
mem.departmentPhysics and Physical Oceanography
mem.divisionsPhysics
mem.fullTextStatuspublic
mem.idNumber10.1149/2.0041901jss
mem.isPublishedpub
mem.pageRangeN1-N4
mem.refereedTrue
oaire.citation.issueECS Journal of Solid State Science and Technology

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